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NP110N04PUJ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
V GS = 10 V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
4
I D = 55 A
Pulsed
10000
C iss
3
C oss
2
1
1000
V GS = 0 V
f = 1 MHz
C rss
0
100
-100
-50
0
50
100
150
200
0.1
1
10
100
T ch - Channel Temperature - ° C
SWITCHING CHARACTERISTICS
V DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
40
35
16
14
30
V DD = 32 V
12
100
10
t d(off)
t d(on)
t r
t f
25
20
15
20 V
8V
V GS
10
8
6
1
V DD = 20 V
V GS = 10 V
R G = 0 Ω
10
5
0
V DS
I D = 110 A
4
2
0
0.1
1
10
100
1000
0
20
40
60
80
100 120 140 160
I D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
0V
1000
100
Q G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
V GS = 10 V
10
10
1
di/dt = 100 A/ μ s
0.1
Pulsed
1
V GS = 0 V
0
0.5
1
1.5
0.1
1
10
100
1000
V F(S-D) - Source to Drain Voltage - V
Data Sheet D19730EJ1V0DS
I F - Diode Forward Current - A
5
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相关代理商/技术参数
NP110N04PUJ-E2B-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
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NP110N055PUG-E1 制造商:Renesas Electronics Corporation 功能描述:
NP110N055PUG-E1-A 制造商:Renesas Electronics Corporation 功能描述:
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